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IS61LV12816L - 128K x 16 HIGH-SPEED CMOS STATIC RAM

General Description

static RAM organized as 131,072 words by 16 bits.

technology.

Key Features

  • High-speed access time: 8, 10 ns.
  • Operating Current: 50mA (typ. ).
  • Stand by Current: 700µA (typ. ).
  • TTL and CMOS compatible interface levels.
  • Single 3.3V power supply.
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial temperature available.
  • Lead-free available.

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📁 Similar Datasheet

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61LV12816LL 128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61LV12816 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12824 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV2568L 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV256AL 32K x 8 LOW VOLTAGE CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS61LV12816L 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY ISSI® OCTOBER 2005 FEATURES • High-speed access time: 8, 10 ns • Operating Current: 50mA (typ.) • Stand by Current: 700µA (typ.) • TTL and CMOS compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Lead-free available DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.