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IS61LV12816 - 128K x 16 HIGH-SPEED CMOS STATIC RAM

General Description

RAM organized as 131,072 words by 16 bits.

It is fabricated using 1+51's high-performance CMOS technology.

Key Features

  • • • • • • 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY High-speed access time: 8, 10, 12, and 15 ns CMOS low power operation TTL and CMOS compatible interface levels Single 3.3V + 10%power supply Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available.

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Datasheet Details

Part number IS61LV12816
Manufacturer Integrated Circuit Solution
File Size 146.94 KB
Description 128K x 16 HIGH-SPEED CMOS STATIC RAM
Datasheet download datasheet IS61LV12816 Datasheet

Full PDF Text Transcription (Reference)

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IS61LV12816 FEATURES • • • • • 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY High-speed access time: 8, 10, 12, and 15 ns CMOS low power operation TTL and CMOS compatible interface levels Single 3.3V + 10%power supply Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available DESCRIPTION The 1+51 IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using 1+51's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.