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IS61LV5128 - 512K x 8 HIGH-SPEED CMOS STATIC RAM

General Description

524,288-word by 8-bit CMOS static RAM.

nology.

Key Features

  • High-speed access times: 10, 12 and 15 ns.
  • High-performance, low-power CMOS process.
  • Multiple center power and ground pins for greater noise immunity.
  • Easy memory expansion with CE and OE options.
  • CE power-down.
  • Fully static operation: no clock or refresh required.
  • TTL compatible inputs and outputs.
  • Single 3.3V power supply.
  • Packages available:.
  • 36-pin 400-mil SOJ.
  • 36-pin miniBGA.
  • 44-pin.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61LV5128AL 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV12816 128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61LV25616 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61LV25616L 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61LV2568 256K x 8 HIGH-SPEED CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS61LV5128 ISSI® 512K x 8 HIGH-SPEED CMOS STATIC RAM JULY 2001 FEATURES • High-speed access times: 10, 12 and 15 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 3.3V power supply • Packages available: – 36-pin 400-mil SOJ – 36-pin miniBGA – 44-pin TSOP (Type II) DESCRIPTION The ISSI IS61LV5128 is a very high-speed, low power, 524,288-word by 8-bit CMOS static RAM. The IS61LV5128 is fabricated using ISSI's high-performance CMOS tech- nology.