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IS61QDB42M36 Datasheet Quad (burst Of 4) Synchronous Srams

Manufacturer: ISSI (now Infineon)

Overview: 72 Mb (2M x 36 & 4M x 18) Q7 UAD (Burst o. f 4) Synchronous SRAMs Q November.

General Description

The 72Mb IS61QDB42M36 and IS61QDB44M18 are synchronous, high-performance CMOS static random access memory (SRAM) devices.

These SRAMs have separate I/Os, eliminating the need for high-speed bus turnaround.

The rising edge of K clock initiates the read/write operation, and all internal operations are self-timed.

Key Features

  • 2M x 36 or 4M x 18.
  • On-chip delay-locked loop (DLL) for wide data valid window.
  • Separate read and write ports with concurrent read and write operations.
  • Synchronous pipeline read with late write operation.
  • Double data rate (DDR) interface for read and write input ports.
  • Fixed 4-bit burst for read and write operations.
  • Clock stop support.
  • Two input clocks (K and K) for address and control registering at rising edges o.

IS61QDB42M36 Distributor