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IS61WV102416ALL - 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC

Download the IS61WV102416ALL datasheet PDF. This datasheet also covers the IS64WV102416BLL variant, as both devices belong to the same 1m x 16 high-speed asynchronous cmos static family and are provided as variant models within a single manufacturer datasheet.

General Description

ISSI APRIL 2006 ® The ISSI IS61WV102416ALL/BLL and IS64WV102416BLL

High-speed access times: are high-speed, 16M-bit static RAMs organized as 1024K 8, 10, 20 ns words by 16 bits.

High-performance, low-power CMOS process ance CMOS techno

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS64WV102416BLL_ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS61WV12816DALL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DALS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DBLS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV51216ALL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61WV102416BLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC
IS61WV102416DALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV102416DBLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV102416FALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV102416FBLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com IS61WV102416ALL IS61WV102416BLL IS64WV102416BLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES DESCRIPTION ISSI APRIL 2006 ® The ISSI IS61WV102416ALL/BLL and IS64WV102416BLL • High-speed access times: are high-speed, 16M-bit static RAMs organized as 1024K 8, 10, 20 ns words by 16 bits. It is fabricated using ISSI's high-perform• High-performance, low-power CMOS process ance CMOS technology. This highly reliable process coupled • Multiple center power and ground pins for greater with innovative circuit design techniques, yields high-perfornoise immunity mance and low power consumption devices.