IS61WV102416BLL Overview
ISSI APRIL 2006 ® The ISSI IS61WV102416ALL/BLL and IS64WV102416BLL High-speed access times: are high-speed, 16M-bit static RAMs organized as 1024K 8, 10, 20 ns words by 16 bits. It is fabricated using ISSI's high-perform High-performance, low-power CMOS process ance CMOS technology.
IS61WV102416BLL Key Features
- High-speed access times: are high-speed, 16M-bit static RAMs organized as 1024K 8, 10, 20 ns words by 16 bits. It is fab
- Multiple center power and ground pins for greater with innovative circuit design techniques, yields high-perfornoise imm
- Easy memory expansion with CE and OE options When CE is HIGH (deselected), the device assumes a
- CE power-down standby mode at which the power dissipation can be reduced down with CMOS input levels
- Fully static operation: no clock or refresh required Easy memory expansion is provided by using Chip Enable
- TTL patible inputs and outputs and Output Enable inputs, CE and OE. The active LOW
- Packages available
- 48-ball miniBGA (9mm x 11mm)
- 48-pin TSOP (Type I)
- Industrial and Automotive Temperature Support