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IS61WV10248BLL Datasheet 1m X 8 High-speed CMOS Static Ram

Manufacturer: ISSI (now Infineon)

Overview: IS61WV10248ALL IS61WV10248BLL IS64WV10248BLL 1M x 8 HIGH-SPEED CMOS STATIC RAM JUNE.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ISSI IS61WV10248ALL/BLL and IS64WV10248BLL are very high-speed, low power, 1M-word by 8-bit CMOS static RAM.

The IS61WV10248ALL/BLL and IS64WV10248BLL are fabricated using ISSI's high- performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

Key Features

  • High-speed access times: 8, 10, 20 ns.
  • High-performance, low-power CMOS process.
  • Multiple center power and ground pins for greater noise immunity.
  • Easy memory expansion with CE and OE options.
  • CE power-down.
  • Fully static operation: no clock or refresh required.
  • TTL compatible inputs and outputs.
  • Single power supply.
  • VDD 1.65V to 2.2V (IS61WV10248ALL) speed = 20ns for Vcc = 1.65V to 2.2V.
  • VDD 2.4V to 3.6V (.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS61WV10248ALL 1M x 8 HIGH-SPEED CMOS STATIC RAM
IS61WV10248EDBLL 1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV10248EEALL 1M x 8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM
IS61WV10248EEBLL 1M x 8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM
IS61WV102416ALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC
IS61WV102416BLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC
IS61WV102416DALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV102416DBLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV102416FALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV102416FBLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

IS61WV10248BLL Distributor