IS61WV10248EDBLL - 1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

Product Overview

ISSI

Datasheet Details

Part number	IS61WV10248EDBLL
Manufacturer	ISSI
File Size	428.70 KB
Description	1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
Datasheet	IS61WV10248EDBLL Datasheet
Additional preview pages of the IS61WV10248EDBLL datasheet.

Product details

Description

The ISSI IS61/64WV10248EDBLL are very high-speed, low power, 1M-word by 8-bit CMOS static RAM.The IS61/64WV10248EDBLL are fabricated using ISSI's high-performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.The IS61/64WV10248EDBLL operate from a

Features

High-speed access times: 8, 10, 20 ns.
High-performance, low-power CMOS process.
Multiple center power and ground pins for greater noise immunity.
Easy memory expansion with CE and OE options.
CE power-down.
Fully static operation: no clock or refresh required.
TTL compatible inputs and outputs.
Packages available:.
48-ball miniBGA (6mm x 8mm).
44-pin TSOP (Type II).
Industrial and Au.

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Published: Jun 10, 2016 |