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IS62WV2568DALL - ULTRA LOW POWER CMOS STATIC RAM

General Description

256K words by 8 bits.

Key Features

  • High-speed access time: 35ns, 45ns, 55ns.
  • CMOS low power operation.
  • 36 mW (typical) operating.
  • 9 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.8V ± 10% Vcc (IS62/65WV2568DALL).
  • 2.5V.
  • 3.6V Vcc (IS62/65WV2568DBLL).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Industrial temperature available.
  • Lead-.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS62WV2568DBLL ULTRA LOW POWER CMOS STATIC RAM
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IS62WV25616DALL ULTRA LOW POWER CMOS STATIC SRAM
IS62WV25616DBLL ULTRA LOW POWER CMOS STATIC SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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  IS62/65WV2568DALL  IS62/65WV2568DBLL 256K x 8 LOW VOLTAGE, JUNE 2013 ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35ns, 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 9 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.8V ± 10% Vcc (IS62/65WV2568DALL) – 2.5V–3.6V Vcc (IS62/65WV2568DBLL) • Fully static operation: no clock or refresh required • Three state outputs • Industrial temperature available • Lead-free available DESCRIPTION The ISSI IS62/65WV2568DALL and IS62/65WV2568DBLL are high-speed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSI's high- performance CMOS technology.