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IS62WV2568BLL - ULTRA LOW POWER CMOS STATIC RAM

Download the IS62WV2568BLL datasheet PDF. This datasheet also covers the IS62WV2568ALL variant, as both devices belong to the same ultra low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 55ns, 70ns.
  • CMOS low power operation.
  • 36 mW (typical) operating.
  • 9 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V--2.2V VCC (62WV2568ALL).
  • 2.5V--3.6V VCC (62WV2568BLL).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Industrial temperature available.
  • Lead-free available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS62WV2568ALL_IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS62WV2568ALL IS62WV2568BLL www.DataSheet4U.com ISSI JUNE 2005 ® 256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V VCC (62WV2568ALL) – 2.5V--3.6V VCC (62WV2568BLL) • Fully static operation: no clock or refresh required • Three state outputs • Industrial temperature available • Lead-free available DESCRIPTION The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology.