Datasheet4U Logo Datasheet4U.com

IS62WV2568DBLL - ULTRA LOW POWER CMOS STATIC RAM

Download the IS62WV2568DBLL datasheet PDF. This datasheet also covers the IS62WV2568DALL variant, as both devices belong to the same ultra low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

256K words by 8 bits.

Key Features

  • High-speed access time: 35ns, 45ns, 55ns.
  • CMOS low power operation.
  • 36 mW (typical) operating.
  • 9 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.8V ± 10% Vcc (IS62/65WV2568DALL).
  • 2.5V.
  • 3.6V Vcc (IS62/65WV2568DBLL).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Industrial temperature available.
  • Lead-.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS62WV2568DALL-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS62WV2568ALL ULTRA LOW POWER CMOS STATIC RAM Integrated Silicon Solution
IS62WV2568BLL ULTRA LOW POWER CMOS STATIC RAM Integrated Silicon Solution
IS62WV25616ALL ULTRA LOW POWER CMOS STATIC RAM Integrated Silicon Solution
IS62WV25616BLL ULTRA LOW POWER CMOS STATIC RAM Integrated Silicon Solution
IS62WV20488ALL 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS62WV2568DALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV2568EALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV2568EBLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV25616DALL ULTRA LOW POWER CMOS STATIC SRAM
IS62WV25616DBLL ULTRA LOW POWER CMOS STATIC SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
  IS62/65WV2568DALL  IS62/65WV2568DBLL 256K x 8 LOW VOLTAGE, JUNE 2013 ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 35ns, 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 9 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.8V ± 10% Vcc (IS62/65WV2568DALL) – 2.5V–3.6V Vcc (IS62/65WV2568DBLL) • Fully static operation: no clock or refresh required • Three state outputs • Industrial temperature available • Lead-free available DESCRIPTION The ISSI IS62/65WV2568DALL and IS62/65WV2568DBLL are high-speed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSI's high- performance CMOS technology.