IS62WV2568EBLL Datasheet | ISSI

FEATURES - High-speed access time: 45ns, 55ns - CMOS low power operation - Operating Current: 18 m A (max) at 85°C - CMOS Standby Current: 5.4u A (typ) at 25°C - TTL patible interface levels - Single power supply - 1.65V-2.2V VDD (IS62WV2568EALL) - 2.2V-3.6V VDD (IS62/65WV2568EBLL) - Three state outputs - Industrial and Automotive temperature support - Lead-free available DESCRIPTION The ISSI IS62/65WV2568EALL/EBLL are high-speed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices. When CS1# is HIGH (deselected) or when CS2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE#) controls both writing and reading of the memory. The IS62/65WV2568EALL/EBLL are packaged in the JEDEC standard 32-pin TSOP (TYPE I), s TSOP (TYPE I), and 36-pin mini BGA.. FUNCTIONAL BLOCK DIAGRAM A0 - A17 VDD GND I/O0 - I/O7 DECODER 256K x 8 MEMORY ARRAY I/O DATA CIRCUIT COLUMN I/O CS2 CS1# OE# WE# CONTROL CIRCUIT Copyright © 2018 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not remend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or...