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IS62WV2568EALL - ULTRA LOW POWER CMOS STATIC RAM

General Description

The ISSI IS62/65WV2568EALL/EBLL are high-speed, 2M bit static RAMs organized as 256K words by 8 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • Operating Current: 18 mA (max) at 85°C.
  • CMOS Standby Current: 5.4uA (typ) at 25°C.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V-2.2V VDD (IS62WV2568EALL).
  • 2.2V-3.6V VDD (IS62/65WV2568EBLL).
  • Three state outputs.
  • Industrial and Automotive temperature support.
  • Lead-free available.

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📁 Similar Datasheet

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS62WV2568EBLL ULTRA LOW POWER CMOS STATIC RAM
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IS62WV25616DBLL ULTRA LOW POWER CMOS STATIC SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS62WV2568EALL IS62/65WV2568EBLL 256Kx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM MARCH 2018 KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 18 mA (max) at 85°C – CMOS Standby Current: 5.4uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62WV2568EALL) – 2.2V-3.6V VDD (IS62/65WV2568EBLL)  Three state outputs  Industrial and Automotive temperature support  Lead-free available DESCRIPTION The ISSI IS62/65WV2568EALL/EBLL are high-speed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices.