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IS63WV1024BLL - 128K x 8 HIGH-SPEED CMOS STATIC RAM

Download the IS63WV1024BLL datasheet PDF. This datasheet also covers the IS64WV1024BLL variant, as both devices belong to the same 128k x 8 high-speed cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

power, 131,072-word by 8-bit CMOS static RAM.

high-performance CMOS technology.

Key Features

  • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V.
  • 3.6V.
  • High-performance, low-power CMOS process.
  • CMOS Low Power Operation 50 mW (typical) operating current 25 µW (typical) standby current.
  • Multiple center power and ground pins for greater noise immunity.
  • Easy memory expansion with CE and OE options.
  • CE power-down.
  • Fully static operation: no clock or refresh required.
  • TTL compatible inputs and outputs.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS64WV1024BLL_ISSI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS63WV1024BLL IS64WV1024BLL 128K x 8 HIGH-SPEED CMOS STATIC RAM MAY 2012 FEATURES • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V – 3.6V • High-performance, low-power CMOS process • CMOS Low Power Operation 50 mW (typical) operating current 25 µW (typical) standby current • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Packages available: – 32-pin TSOP (Type II) – 32-pin sTSOP (Type I) – 48-Ball miniBGA (6mm x 8mm) – 32-pin 300-mil SOJ • Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS63/64WV1024BLL is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM.