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IS63WV1288DALL - 128K x 8 HIGH-SPEED CMOS STATIC RAM

General Description

low power, 131,072-word by 8-bit CMOS static RAM.

high-performance CMOS technology.

Key Features

  • HIGH SPEED: (IS63/64WV1288DALL/DBLL).
  • High-speed access time: 8, 10, 12, 20 ns.
  • Low Active Power: 135 mW (typical).
  • Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS63/64WV1288DALS/DBLS).
  • High-speed access time: 25, 35 ns.
  • Low Active Power: 55 mW (typical).
  • Low Standby Power: 12 µW (typical) CMOS standby.
  • Single power supply.
  • Vdd 1.65V to 2.2V (IS63WV1288DAxx).
  • Vdd 2.4V to 3.6V (IS63/64WV1288DBxx).

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS63WV1288DALS 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS63WV1288DBLL 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS63WV1288DBLS 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS63WV1024BLL 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C1024AL 128K x 8 HIGH-SPEED CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS63WV1288DALL/DALS IS63WV1288DBLL/DBLS IS64WV1288DBLL/DBLS 128K x 8 HIGH-SPEED CMOS STATIC RAM JUNE 2021 FEATURES HIGH SPEED: (IS63/64WV1288DALL/DBLL) • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical) • Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS63/64WV1288DALS/DBLS) • High-speed access time: 25, 35 ns • Low Active Power: 55 mW (typical) • Low Standby Power: 12 µW (typical) CMOS standby • Single power supply — Vdd 1.65V to 2.2V (IS63WV1288DAxx) — Vdd 2.4V to 3.