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IS66WVE4M16ALL Datasheet

Manufacturer: ISSI (now Infineon)
IS66WVE4M16ALL datasheet preview

Datasheet Details

Part number IS66WVE4M16ALL
Datasheet IS66WVE4M16ALL-ISSI.pdf
File Size 463.37 KB
Manufacturer ISSI (now Infineon)
Description 1.8V Core Async/Page PSRAM
IS66WVE4M16ALL page 2 IS66WVE4M16ALL page 3

IS66WVE4M16ALL Overview

PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications. The 64Mb DRAM core device is organized as 4 Meg x 16 bits. These devices include the industry-standard, asynchronous memory interface found on other low-power SRAM or pseudo-SRAM (PSRAM) offerings.

IS66WVE4M16ALL Key Features

  • Asynchronous and page mode interface
  • Dual voltage rails for optional performance
  • VDD 1.8V, VDDQ 1.8V
  • Page mode read access
  • Interpage Read access : 70ns
  • Intrapage Read access : 20ns
  • Low Power Consumption
  • Asynchronous Operation < 30 mA
  • Intrapage Read < 18mA
  • Standby < 180 uA (max.)
ISSI (now Infineon) logo - Manufacturer

More Datasheets from ISSI (now Infineon)

See all ISSI (now Infineon) datasheets

Part Number Description
IS66WVE4M16BLL 3.0V Core Async/Page PSRAM
IS66WVE4M16EALL 64Mb Async/Page PSRAM
IS66WVE4M16EBLL 64Mb Async/Page PSRAM
IS66WVE4M16ECLL 64Mb Async/Page PSRAM
IS66WVE4M16TALL 64Mb Async/Page PSRAM
IS66WVE4M16TBLL 64Mb Async/Page PSRAM
IS66WVE4M16TCLL 64Mb Async/Page PSRAM
IS66WVE1M16ALL 1.8V Core Async/Page PSRAM
IS66WVE1M16BLL 3.0V Core Async/Page PSRAM
IS66WVE1M16EALL 16Mb Async/Page PSRAM

IS66WVE4M16ALL Distributor

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