• Part: IS66WVE4M16ALL
  • Description: 1.8V Core Async/Page PSRAM
  • Manufacturer: ISSI
  • Size: 463.37 KB
IS66WVE4M16ALL Datasheet (PDF) Download
ISSI
IS66WVE4M16ALL

Description

PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications.

Key Features

  • Asynchronous and page mode interface
  • Dual voltage rails for optional performance
  • Page mode read access
  • Low Power Consumption  Asynchronous Operation < 30 mA  Intrapage Read < 18mA  Standby < 180 uA (max.)  Deep power-down (DPD) < 3uA (Typ)
  • Low Power Feature  Temperature Controlled Refresh  Partial Array Refresh  Deep power-down (DPD) mode
  • Operating temperature Range Industrial and Automotive, A1: -40°C~85°C
  • Package: 48-ball TFBGA, 48-pin TSOP-I
  • The 48-pin TSOP-I package option is not yet available. Please contact SRAM marketing at sram@issi. for