Datasheet Details
| Part number | IS66WVE4M16BLL |
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| Manufacturer | ISSI (now Infineon) |
| File Size | 544.90 KB |
| Description | 3.0V Core Async/Page PSRAM |
| Datasheet |
 IS66WVE4M16BLL Datasheet
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General Description
PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications.
The 64Mb DRAM core device is organized as 4 Meg x 16 bits.
Key Features
- Asynchronous and page mode interface.
- Dual voltage rails for optional performance.
- VDD 2.7V~3.6V, VDDQ 2.7V~3.6V.
- Page mode read access.
- Interpage Read access : 70ns.
- Intrapage Read access : 20ns.
- Low Power Consumption.
- Asynchronous Operation < 30 mA.
- Intrapage Read < 18mA.
- Standby < 180 uA (max. ).
- Deep power-down (DPD) < 3uA (Typ).
- Low Power Feature.
- Temperature Controlled Refresh.
- Partial Array Refresh.
- Deep power-dow.