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IXDH20N120 - High Voltage IGBT

Features

  • q q q q q q q q q NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard package Advantages µs W W Typical.

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Full PDF Text Transcription

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High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE(sat) typ = 2.4 V C G G C TO-247 AD G C E IXDH 20N120 E IXDH 20N120 D1 E C (TAB) G = Gate, C = Collector , E = Emitter TAB = Collector Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp = 1 ms VGE = ±15 V, TJ = 125°C, RG = 82 W Clamped inductive load, L = 30 µH VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 82 W, non repetitive TC = 25°C IGBT Diode Maximum Ratings 1200 1200 ±20 ±30 38 25 50 ICM = 35 VCEK < VCES 10 200 75 -55 ... +150 -55 ... +150 300 0.8 - 1.
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