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IXDH35N60B - IGBT with optional Diode

Features

  • q q q q q q q q Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Md Weight Symbol Conditions Mounting torque TO-220 TO-247 q NPT IGBT technology low switching losses low tail current no latch up short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard package Advantages q q Space savings High power density Characteristic Values (TJ = 25°C, unless otherwise speci.

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Full PDF Text Transcription

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IGBT with optional Diode High Speed, Low Saturation Voltage IXDP 35N60 B VCES = 600 V = 60 A IXDH 35N60 B IC25 IXDH 35N60 BD1 VCE(sat) typ = 2.1 V C G G C TO-247 AD IXDH ... E IXDH 35N60 B IXDP 35N60 B E IXDH 35N60 BD1 G C E C (TAB) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp =1 ms VGE = ±15 V, TJ = 125°C, RG = 10 W Clamped inductive load, L = 30 µH VGE = ±15 V, VCE = 600 V, TJ = 125°C RG = 10 W, non repetitive TC = 25°C IGBT Diode Maximum Ratings 600 600 ±20 ±30 60 35 70 ICM = 110 VCEK < VCES 10 250 80 -55 ... +150 -55 ... +150 300 0.4 - 0.6 0.8 - 1.2 6 V V V V A A A A µs W W °C °C °C Nm Nm g TO-220 AB IXDP ...
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