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IXDR30N120 - High Voltage IGBT

Features

  • NPT IGBT technology - high switching speed - low switching losses - square RBSOA, no latch up - high short circuit capability - positive temperature coefficient for easy paralleling - MOS input, voltage controlled - fast recovery epitaxial diode.
  • Epoxy meets UL 94V-0.
  • Isolated and UL registered E153432 Advantages.
  • DCB Isolated mounting tab.
  • Meets TO-247AD package Outline.
  • Package for clip or spring mounting.
  • Space savings.

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Full PDF Text Transcription

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High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) Short Circuit SOA Capability C Square RBSOA G E IXDR 30N120 IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A V = CE(sat) typ 2.
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