IXDR30N120D1 Description
1200 V 4.5 6.5 V 1.5 mA 2.5 mA ± 500 nA 2.4 2.9.
IXDR30N120D1 Key Features
- NPT IGBT technology
- high switching speed
- low switching losses
- square RBSOA, no latch up
- high short circuit capability
- positive temperature coefficient for easy paralleling
- MOS input, voltage controlled
- fast recovery epitaxial diode
- Epoxy meets UL 94V-0
- Isolated and UL registered E153432