Overview: High Voltage IGBT with optional Diode ISOPLUSTM package
(Electrically Isolated Back Side) Short Circuit SOA Capability C Square RBSOA G E IXDR 30N120 IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A V = CE(sat) typ 2.4 V C G
E IXDR 30N120 D1 ISOPLUS 247TM E153432 G C E Isolated Backside* G = Gate C = Collector E = Emitter Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA
tSC (SCSOA) PC
TJ Tstg VISOL Weight
Symbol
V(BR)CES VGE(th) ICES
IGES VCE(sat) Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ
Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp = 1 ms
VGE = ±15 V, TJ = 125°C, RG = 47 Ω Clamped inductive load, L = 30 mH VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 47 Ω, non repetitive TC = 25°C IGBT Diode 50/60 Hz, RMS IISOL < 1 mA Maximum Ratings 1200 V 1200 V ±20 V ±30 V 50 A 30 A 60 A
ICM = 50 A VCEK < VCES
10 µs
200 W 95 W
-55 ... +150 °C -55 ... +150 °C
2500 V~ 6g Conditions
VGE = 0 V IC = 1 mA, VCE = VGE VCE = VCES, TJ = 25°C
TJ = 125°C VCE = 0 V, VGE = ± 20 V IC = 30 A, VGE = 15 V Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max. 1200 V 4.5 6.5 V 1.5 mA 2.5 mA ± 500 nA 2.4 2.
