IXDR35N60BD1 Description
600 V 3 5V TJ = 25°C TJ = 125°C 0.1 mA 1 mA ± 500 nA 2.2 2.7.
IXDR35N60BD1 Key Features
- NPT IGBT technology
- low switching losses
- low tail current
- no latch up
- short circuit capability
- MOS input, voltage controlled
- optional ultra fast diode
- Epoxy meets UL 94V-0
- Isolated and UL registered E153432
- DCB Isolated mounting tab