Overview: IXDR 35N60 BD1 IGBT with optional Diode
High Speed, Low Saturation Voltage VCES = 600 V IC25 = 38 A V =CE(sat) typ 2.2 V C ISOPLUS 247TM G E G C E Isolated back surface G = Gate, C = Collector , E = Emitter TAB = Collector Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA
tSC (SCSOA) PC
TJ Tstg VISOL FC Weight
Symbol
V (BR)CES
VGE(th) ICES
I
GES
VCE(sat) Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ
Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp =1 ms
VGE= ±15 V, TJ = 125°C, RG = 10 Ω Clamped inductive load, L = 30 µH VGE= ±15 V, VCE = 600 V, TJ = 125°C RG = 10 Ω, non repetitive TC = 25°C IGBT Diode 50/60 Hz RMS; IISOL ≤ 1 mA mounting force with clip typical Maximum Ratings 600 V 600 V ±20 V ±30 V 38 A 24 A 48 A ICM = 110 VCEK < VCES
10 A µs 125 50
-55 ... +150 -55 ... +150
2500 20...120
6 W W
°C °C
V~ N g Conditions
V =0V GE
IC = 0.7 mA, VCE = VGE VCE = VCES
V = 0 V, V = ± 20 V CE GE
IC = 35 A, VGE = 15 V Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max. 600 V 3 5V TJ = 25°C TJ = 125°C 0.1 mA 1 mA
± 500 nA 2.2 2.
