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IXFC24N50 - (IXFC24N50 / IXFC26N50) HiPerFET MOSFETs ISOPLUS220

Features

  • l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(.

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Datasheet Details

Part number IXFC24N50
Manufacturer IXYS
File Size 95.45 KB
Description (IXFC24N50 / IXFC26N50) HiPerFET MOSFETs ISOPLUS220
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www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) 0.20 Ω 0.23 Ω IXFC 26N50 IXFC 24N50 500 V 23 A 500 V 21 A trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 26N50 24N50 26N50 24N50 26N50 24N50 Maximum Ratings 500 500 ± 20 ± 30 23 21 92 84 26 24 30 5 230 -55 ... +150 150 -55 ...
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