IXFC26N50 Description
.. ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) 0.20 Ω 0.23 Ω IXFC 26N50 IXFC 24N50 500 V 23 A 500 V 21 A trr ≤ 250 ns Symbol.
IXFC26N50 Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation l Low drain to tab capacitance(<35pF) l Low RDS (on) HDMOSTM process l Rugged polysilicon gat