IXFH120N15P
IXFH120N15P is Polar MOSFETs manufactured by IXYS.
Advanced Technical Information
Polar TM Hi Per FET Power MOSFET
N-Channel Enhancement Mode Fast recovery intrinsic diode
IXFH 120N15P IXFT 120N15P
VDSS = 150 V ID25 = 120 A RDS(on) ≤ 17 mΩ ≤ 200 ns trr
..
Symbol VDSS VDGR VGS VGSM ID25
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 10°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 175°C, RG = 4 Ω TC = 25°C
Maximum Ratings 150 150 ± 20 ± 30 120 75 300 60 50 1.5 10 600 -55 ... +175 175 -55 ... +175 V V V V A A A A m J J V/ns W °C °C °C °C
TO-247AD (IXFH)
D (TAB) S
ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
TO-268 (IXFT)
S D = Drain TAB = Drain
D (TAB)
G = Gate S = Source
1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-268 (TO-247)
1.13/10 Nm/lb.in. 5.5 5.0 g g
Features z z z
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4m A VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 175°C
Characteristic Values Min. Typ. Max. 300 3.0 5.0 ±100 25 1000 17 V V n A µA µA mΩ z
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance
- easy to drive and to protect Fast intrinsic diode
Advantages z z z
Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Polar HTTM DMOS transistors utilize proprietary designs and process. US patent is pending.
DS99210(9/04)
© 2004 IXYS All rights reserved
IXFH 120N15P IXFT...
