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IXFH120N20P - Power MOSFET

Key Features

  • z International Standard Packages z Avalanche Rated z Fast Intrinsic Diode z Low QG z Low RDS(on) z Low Drain-to-Tab Capacitance z Low Package Inductance Advantages z Easy to Mount z Space Savings.

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Full PDF Text Transcription for IXFH120N20P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFH120N20P. For precise diagrams, and layout, please refer to the original PDF.

PolarTM HiPerFETTM Power MOSFET IXFH120N20P IXFK120N20P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS P...

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ast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque TO-247 TO-264 Maximum Ratings 200 V 200 V ± 20 V ± 30 V 120 A 75 A 300 A 60 A 2 J 714 W 10 V/ns -55 ... +175 °C 175 °C -55 ... +175 °C 300 °C 260 °C 1.13/10 Nm/lb.in.

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