IXFH120N20P
IXFH120N20P is Power MOSFET manufactured by IXYS.
Polar TM Hi Per FETTM Power MOSFET
IXFH120N20P IXFK120N20P
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol
VDSS VDGR
VGSS VGSM
ID25 ILRMS IDM
IA EAS
PD d V/dt
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque TO-247 TO-264
Maximum Ratings
± 20
± 30
V/ns
-55 ... +175
°C
°C
-55 ... +175
°C
°C
°C
1.13/10 Nm/lb.in.
6 g
10...
