Overview: Advance Technical Information TrenchT2TM HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH340N075T2 IXFT340N075T2 VDSS ID25 RDS(on) = 75V = 340A ≤ 3.2mΩ TO-247 (IXFH) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 75 75 ± 20 340 160 850 170 960 935 -55 ... +175 175 -55 ... +175 V V V A A A A mJ W °C °C °C °C °C Nm/lb.in. g g G D S D (TAB) TO-268 (IXFT) G S
D (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268 300 260 1.
