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IXFH44N50Q3 - Power MOSFET

Key Features

  • Low Intrinsic Gate Resistance.
  • International Standard Packages.
  • Low Package Inductance.
  • Avalanche Rated.
  • Fast Intrinsic Rectifier.
  • Low RDS(on) and QG Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT44N50Q3 IXFH44N50Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 500 V 500 V  30 V  40 V 44 A 130 A 44 A 1.5 J 50 V/ns 830 W -55 ... +150 150 -55 ... +150  C  C  C 300 °C 260 °C 1.13 / 10 4.0 6.0 Nm/lb.in.