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Preliminary Technical Information
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFA5N100P IXFH5N100P IXFP5N100P
RDS(on)
VDSS ID25
= 1000V = 5A ≤ 2.8Ω
TO-263 (IXFA)
G
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 1000 1000 ±30 ±40 5 10 5 300 10 250 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. g g g
G = Gate S = Source G G D S
S
(TAB)
TO-247 (IXFH)
(TAB)
TO-220 (IXFP)
DS
(TAB)
1.6mm (0.
IXFH5N100P Datasheet
