IXFH7N80
IXFH7N80 is Power MOSFET manufactured by IXYS.
.Data Sheet.co.kr
Hi Per FETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
IXFH 7 N80 VDSS = 800 V IXFM 7 N80 ID (cont) = 7 A
RDS(on) = 1.4 W trr = 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings 800 800 ±20 ±30 7 28 7 18 5 180 -55 ... +150 150 -55 ... +150 V V V V A A A m J V/ns
TO-247 AD (IXFH)
(TAB)
TO-204 AA (IXFM)
W °C °C °C °C Nm/lb.in.
G = Gate, S = Source,
D = Drain, TAB = Drain
1.6 mm (0.062 in.) from case for 10 s Mounting torque
300 1.13/10
TO-204 = 18 g, TO-247 = 6 g
Features
- International standard packages
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- easy to drive and to protect
- Fast intrinsic Rectifier Applications
- DC-DC converters
- Synchronous rectification
- Battery chargers
- Switched-mode and resonant-mode power supplies
- DC...
