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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
IXFH 7 N80 VDSS = 800 V IXFM 7 N80 ID (cont) = 7 A
RDS(on) = 1.4 W trr = 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings 800 800 ±20 ±30 7 28 7 18 5 180 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns
TO-247 AD (IXFH)
(TAB)
TO-204 AA (IXFM)
D
G
W °C °C °C °C Nm/lb.in.
G = Gate, S = Source,
D = Drain, TAB = Drain
1.6 mm (0.062 in.) from case for 10 s Mounting torque
300 1.
IXFH7N80 Datasheet
