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Advanced Technical Information
HiPerFETTM Power MOSFETs
IXFK 20N120 IXFX 20N120
VDSS ID25
RDS(on)
= 1200 V = 20 A = 0.75 Ω
trr ≤ 300 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 1200 1200 ± 30 ± 40 20 80 10 40 2 5 780 -55 ... +150 150 -55 ... +150 300 0.9/6 V V V V A A A mJ J V/ns W °C °C °C °C Nm/lb.in. 6 10 g g
PLUS 247TM (IXFX)
G
D
D (TAB) S
TO-264 AA (IXFK)
G
D
S
D (TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.063 in.
IXFK20N120 Datasheet
