• Part: IXFK20N120P
  • Manufacturer: IXYS
  • Size: 2.01 MB
Download IXFK20N120P Datasheet PDF
IXFK20N120P page 2
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IXFK20N120P page 3
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IXFK20N120P Description

PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK20N120P IXFX20N120P D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to.

IXFK20N120P Key Features

  • Fast Intrinsic Diode
  • Dynamic dv/dt Rating
  • Avalanche Rated
  • Low RDS(ON) and QG
  • Low Package Inductance
  • High Power Density
  • Easy to Mount
  • Space Savings