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HiPerFETTM Power MOSFET Q2-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL VISOL Md Weight
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IXFN70N60Q2
VDSS = 600V ID25 = 70A RDS(on) ≤ 88mΩ ≤ 250ns trr
miniBLOC, SOT-227 B E153432 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 600 600 ±30 ±40 70 280 70 5 20 890 -55 ... +150 150 -55 ... +150 1.6mm (0.062 in.) from Case for 10s 50/60Hz, RMS IISOL ≤ 1mA t = 1min t = 1s 300 2500 3000 1.5/13 1.3/11.5 30 V V V V A A A J V/ns W °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in.
IXFN70N60Q2 Datasheet
