IXFN73N30Q Description
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL≤ 1 mA t = 1 min t=1s IS ≤ IDM, di/dt.
IXFN73N30Q Key Features
- IXYS advanced low Qg process
- Low gate charge and capacitances
- easier to drive -faster switching
- Unclamped Inductive Switching (UIS) rated
- Low RDS (on)
- Fast intrinsic diode
- International standard package
- miniBLOC with Aluminium nitride isolation for low thermal resistance
- Low terminal inductance (<10 nH) and stray capacitance to heatsink (<35pf)
- Molding epoxies meet UL 94 V-0 flammability classification