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IXFN73N30Q - Power MOSFET

Key Features

  • IXYS advanced low Qg process.
  • Low gate charge and capacitances - easier to drive -faster switching.
  • Unclamped Inductive Switching (UIS) rated.
  • Low RDS (on).
  • Fast intrinsic diode.
  • International standard package.
  • miniBLOC with Aluminium nitride isolation for low thermal resistance.
  • Low terminal inductance (.

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Other Datasheets by IXYS (now Littelfuse)

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IXFN73N30 HiPerFET Power MOSFETs
IXFN70N60Q2 Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL≤ 1 mA t = 1 min t=1s IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IXFN 73N30Q VDSS ID25 RDS(on) = 300 V = 73 A = 42 mΩ trr ≤ 250 ns Maximum Ratings 300 300 ±20 ±30 73 292 73 60 2.5 5 500 -55 to +150 150 -55 to +150 2500 3000 1.5/13 1.5/13 30 V V miniBLOC, SOT-227 B (IXFN) E153432 S G V V A A A mJ J V/ns W °C °C °C V~ V~ Nm/lb.in. Nm/lb.in.