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PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
TO-263 AA (IXFA)
IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P
TO-220AB (IXFP)
VDSS ID25 trr
RDS(on)
= 800V = 10A ≤ 1.1Ω ≤ 250ns
TO-3P (IXFQ)
G S D (TAB) G DS D (TAB)
G D S
D (TAB)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 800 800 ±30 ±40 10 30 5 600 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in.
IXFQ10N80P Datasheet
