Click to expand full text
Advance Technical Information
PolarP2TM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFQ24N50P2
VDSS ID25
RDS(on) trr(typ)
= = ≤ ≤
500V 24A 270mΩ 200ns
TO-3P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
www.DataSheet4U.net
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 500 500 ± 30 ± 40 24 50 12 750 15 480 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in.
IXFQ24N50P2 Datasheet
