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IXFQ24N50P2 - Power MOSFET

Key Features

  • z z z z Avalanche Rated Fast Intrinsic Diode Dynamic dv/dt Rated Low Package Inductance Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque 300 260 1.13/10 5.5 Advantages High Power Density Easy to Mount Space Savings.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advance Technical Information PolarP2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFQ24N50P2 VDSS ID25 RDS(on) trr(typ) = = ≤ ≤ 500V 24A 270mΩ 200ns TO-3P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 24 50 12 750 15 480 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in.