Datasheet4U Logo Datasheet4U.com

IXFQ28N60P3 - Polar3 HiperFET Power MOSFETs

Download the IXFQ28N60P3 datasheet PDF. This datasheet also covers the IXFH28N60P3 variant, as both devices belong to the same polar3 hiperfet power mosfets family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z z z z 1.6mm (0.062in. ) from Case for 10s Plastic Body for 10 seconds Mounting Torque TO-3P TO-247 300 260 1.13 / 10 5.5 6.0 Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 2.5mA VGS = ±30V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±100 V V nA z High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFH28N60P3_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFQ20N50P3 Power MOSFET IXYS
IXFQ24N60X Power MOSFET IXYS
IXFQ24N60X N-Channel MOSFET INCHANGE
IXFQ12N80P Power MOSFET IXYS
IXFQ140N20X3 Power MOSFET IXYS

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFQ22N60P3 Polar3 HiperFET Power MOSFETs
IXFQ22N60P3 Power MOSFET
IXFQ24N50P2 Power MOSFET
IXFQ26N60P N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
IXFQ10N80P Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advance Technical Information Polar3TM HiperFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFQ28N60P3 IXFH28N60P3 VDSS ID25 RDS(on) = 600V = 28A ≤ 260mΩ TO-3P (IXFQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 28 70 14 500 35 695 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. g g G D S Tab TO-247 ( IXFH) G D S Tab G = Gate S = Source D = Drain Tab = Drain Features z z z z 1.6mm (0.062in.