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IXFQ28N60P3 - Polar3 HiperFET Power MOSFETs

This page provides the datasheet information for the IXFQ28N60P3, a member of the IXFH28N60P3 Polar3 HiperFET Power MOSFETs family.

Datasheet Summary

Features

  • z z z z 1.6mm (0.062in. ) from Case for 10s Plastic Body for 10 seconds Mounting Torque TO-3P TO-247 300 260 1.13 / 10 5.5 6.0 Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 2.5mA VGS = ±30V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±100 V V nA z High Power Density.

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Datasheet Details

Part number IXFQ28N60P3
Manufacturer IXYS Corporation
File Size 150.21 KB
Description Polar3 HiperFET Power MOSFETs
Datasheet download datasheet IXFQ28N60P3 Datasheet
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Advance Technical Information Polar3TM HiperFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFQ28N60P3 IXFH28N60P3 VDSS ID25 RDS(on) = 600V = 28A ≤ 260mΩ TO-3P (IXFQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 28 70 14 500 35 695 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. g g G D S Tab TO-247 ( IXFH) G D S Tab G = Gate S = Source D = Drain Tab = Drain Features z z z z 1.6mm (0.062in.
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