IXFT16N80P Datasheet | IXYS

Polar HVTM Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS VDSS = 800 V ID25 = 16 A RDS(on) ≤ 600 mΩ ≤ 250 ns trr TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 150°C, RG = 5 Ω TC = 25°C Maximum Ratings 800 800 ±30 ±40 16 40 8 30 1.0 10 V V V V A A A m J J V/ns TO-268 (IXFT) D (TAB) PLUS220 (IXFV) PD TJ TJM Tstg TL TSOLD Md FC Weight 460 -55 ... +150 150 -55 ... +150 W °C °C °C °C °C D (TAB) PLUS220SMD (IXFV...S) 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-247) Mounting force (PLUS220) TO-247 TO-268 PLUS220 & PLUS220SMD 300 260 1.13/10 Nm/lb.in. 11..65/2.5..15 6.0 5.0 4.0 N/lb g g g G S G = Gate S = Source D (TAB) D = Drain TAB = Drain Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 m A VGS = ±30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 800 3.0 5.0 ±100 25 250 600 V V n A μA μA mΩ Features z Fast Recovery diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % ..net © 2006 IXYS All rights reserved DS99599E(07/06) IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 9 16 4600 VGS = 0 V, VDS = 25 V, f = 1 MHz 330 23 27 VGS = 10 V, VDS = VDSS, ID = 0.5 ID25 RG = 5 Ω (External) 32 75 29 71 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 21 23 S p F p F p F...