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IXFT24N80P Datasheet PolarHV HiPerFET Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Download the IXFT24N80P datasheet PDF. This datasheet also includes the IXFH24N80P variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IXFH24N80P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Overview

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 24N80P IXFK 24N80P IXFT 24N80P VDSS = 800 V ID25 = 24 A RDS(on) ≤ 400 mΩ ≤ 250 ns trr Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 800 800 ±30 ±40 24 55 12 50 1.5 10 650 -55 ...

+150 150 -55 ...

+150 V V V V A A A mJ J TO-247 (IXFH) G D S D (TAB) TO-268 (IXFT) Case Style G V/ns W °C °C °C S D (TAB) TO-264 AA (IXFK) Mounting torque (TO-247 & TO-264) TO-247 TO-268 TO-264 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s 1.13/10 Nm/lb.in.

Key Features

  • D = Drain Tab = Drain Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ±30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 800 3.0 5.0 ±100 25 1000 400 V V nA μA μA mΩ z z z z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10 V, ID = 0.5.

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