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Preliminary Technical Information
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH24N90P IXFT24N90P
VDSS ID25
RDS(on) trr
= = ≤ ≤
900V 24A 420mΩ 300ns
TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Maximum lead temperature for soldering Plastic body for 10s Mounting torque (TO-247) TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 900 900 ± 30 ± 40 24 48 12 1 15 660 -55 ... +150 150 -55 ... +150 300 260 1.13/10 6 4 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in.
IXFT24N90P Datasheet
