IXFT60N20 Datasheet | IXYS

ADVANCE TECHNICAL INFORMATION Hi Per FETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt IXFH 60N20 IXFT 60N20 VDSS = 200 V = 60 A ID25 RDS(on) = 33 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight ..net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 200 200 ±20 ±30 60 240 60 50 2.5 5 300 -55 to +150 150 -55 to +150 V V V V A A A m J J V/ns W °C °C °C °C TO-247 AD (IXFH) (TAB) TO-268 ( IXFT) Case Style G S (TAB) G = Gate D = Drain S = Source TAB = Drain 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 1.13/10 Nm/lb.in. 6 4 g g Features l l l l International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2.0 4.0 ± 100 TJ = 25°C TJ = 125°C 25 1 33 V V n A µA m A mΩ Advantages l l l VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250µA VDS = VGS, ID = 4 m A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2001 IXYS All rights reserved 98845 (6/01) IXFH 60N20 IXFT 60N20 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 30 40 5200 VGS = 0 V, VDS = 25 V, f = 1 MHz 880 260 38 VGS = 10 V, VDS = 0.5 - VDSS, ID =...