IXFT60N50P3
IXFT60N50P3 is Polar3 HiperFET Power MOSFET manufactured by IXYS.
Advance Technical Information
Polar3TM Hiper FETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFT60N50P3 IXFQ60N50P3 IXFH60N50P3
VDSS ID25
RDS(on)
= 500V = 60A ≤ 100mΩ
TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 500 500 ± 30 ± 40 60 150 30 1 35 1040 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in. g g g Features z z z z
D (Tab)
TO-247 (IXFH)
D (Tab) D = Drain Tab = Drain
G = Gate S = Source
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247 & TO-3P) TO-268 TO-3P TO-247
300 260 1.13 / 10 4.0 5.5 6.0
Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance
Advantages z
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1m A VDS = VGS, ID = 4m A VGS = ±30V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 125°C
Characteristic Values Min. Typ. Max. 500 3.0 5.0 ±100 V V n A z z
High Power Density Easy to Mount Space Savings
Applications z
25 μA 2 m A 100 mΩ z z z z
VGS = 10V, ID = 0.5
- ID25, Note 1
Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls
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DS100311(03/11)...
