IXFT60N20F Datasheet | IXYS

Advance Technical Information .. Hi Per RFTM Power MOSFETs F-Class: Mega Hertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High d V/dt, Low trr IXFH 60N20F IXFT 60N20F VDSS ID25 RDS(on) = = = 200V 60A 38mΩ trr ≤ 200 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-247 TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings (TAB) 200 200 ± 20 ± 30 60 240 60 35 1.5 10 315 -55 ... +150 150 -55 ... +150 300 V V V V A A A m J J V/ns W °C °C °C °C G = Gate, S = Source, TO-268 (IXFT) Case Style G S D = Drain, TAB = Drain (TAB) Features l l l 1.13/10 Nm/lb.in. 6 4 g g l l RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2.0 V 4.0 V ±100 n A TJ = 125°C 50 µA 1.5 m A 38 m Ω l l VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1m A VDS = VGS, ID = 4m A VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1 l l l l l DC-DC converters Switched-mode and resonant-mode power supplies, >500k Hz switching DC choppers 13.5 MHz industrial applications Pulse generation Laser drivers RF amplifiers Advantages l l Space savings High power density © 2002 IXYS All rights reserved 98885 (1/02) IXFH 60N20F IXFT 60N20F...