Overview: HiPerFETTM Power MOSFETs
Q-CLASS IXFX 90N20Q IXFK 90N20Q Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low t
rr V = DSS ID25 = = RDS(on) 200 V 90 A 22 mΩ trr ≤ 200 µs PLUS 247TM (IXFX) Symbol
VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt
PD TJ T
JM
Tstg TL Md Weight
Symbol
V DSS
V GS(th)
IGSS
IDSS
RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C I S ≤ I,
DM di/dt ≤ 100 A/µs, V DD ≤ V DSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247 TO-264 Maximum Ratings 200 V 200 V ±20 V ±30 V 90 A 360 A 90 A 60 mJ 2.5 J 5 V/ns 500 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 0.4/6 Nm/lb.in. 6 g 10 g Test Conditions V = 0 V, I = 250uA GS D V = V , I = 4mA DS GS D VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V
VGS = 10 V, ID = 0.5 • ID25 Note 1 Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max. 200 V 2.0 4.
