Overview: Low V IGBT CE(sat)
High speed IGBT VCES
IXGH/IXGM 17 N100 1000 V IXGH/IXGM 17 N100A 1000 V IC25
34 A 34 A VCE(sat)
3.5 V 4.0 V Symbol Test Conditions Maximum Ratings VCES VCGR
VGES VGEM
IC25 IC90 ICM
SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient
TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 82 Ω Clamped inductive load, L = 300 µH PC TJ TJM Tstg Md Weight TC = 25°C Mounting torque (M3) Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 1000 1000 V V ±20 V ±30 V 34 A 17 A 68 A ICM = 34 @ 0.8 V
CES
150 A W -55 ... +150 150
-55 ... +150 °C °C °C 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C Symbol
BVCES V
GE(th)
I
CES
IGES VCE(sat) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified)
min. typ. max. IC = 3 mA, VGE = 0 V I C = 250 µA, V CE = V GE V = 0.8 • V CE CES
VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V T J = 25°C TJ = 125°C 17N100 17N100A 1000 2.5 V 5V
250 µA 1 mA
±100 nA
3.5 V 4.
