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IXGH17N100U1 Datasheet Low Vce(sat) IGBT With Diode High Speed IGBT With Diode

Manufacturer: IXYS (now Littelfuse)

Overview: VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 1000 V 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V bi Packs Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25° C to 150°C TJ = 25° C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25° C TC = 90° C TC = 25° C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 82 Ω Clamped inductive load, L = 100 µ H TC = 25° C Maximum Ratings 1000 1000 ±20 ±30 34 17 68 ICM = 34 @ 0.8 VCES 150 -55 ... +150 150 -55 ...

Key Features

  • W °C °C °C l l l l Mounting torque (M3) 1.13/10 Nm/lb. in. 6 300 g °C Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s l l International standard package JEDEC TO-247 AD IGBT and anti-parallel FRED in one package 2nd generation.

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IXGH17N100U1 Distributor