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VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 1000 V 1000 V
IC25 34 A 34 A
VCE(sat) 3.5 V 4.0 V
Combi Packs
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25° C to 150°C TJ = 25° C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25° C TC = 90° C TC = 25° C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 82 Ω Clamped inductive load, L = 100 µ H TC = 25° C
Maximum Ratings 1000 1000 ±20 ±30 34 17 68 ICM = 34 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 V V V V A A A A
TO-247 AD
G
C
E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Features W °C °C °C
l l
l l
Mounting torque (M3)
1.13/10 Nm/lb.in. 6 300 g °C
Maximum lead temperature for soldering 1.6 mm (0.062 in.
IXGH17N100AU1 Datasheet
