IXGH17N100AU1 Description
+150 V V V V A A A A TO-247 AD G C E C = Collector, TAB = Collector G = Gate, E = Emitter,.
IXGH17N100AU1 Key Features
- for minimum on-state conduction losses MOS Gate turn-on
- drive simplicity Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low IRM