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IXGH25N100 - High speed IGBT

Key Features

  • International standard packages 2nd generation.

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Full PDF Text Transcription for IXGH25N100 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXGH25N100. For precise diagrams, and layout, please refer to the original PDF.

VCES Low VCE(sat) High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V I C25 50 A 50 A VCE(sat) 3.5 V 4.0 V Symbol www.DataSheet4U.com Test Conditions TJ = ...

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VCE(sat) 3.5 V 4.0 V Symbol www.DataSheet4U.com Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient T C = 25°C T C = 90°C T C = 25°C, 1 ms V GE = 15 V, TVJ = 125° C, RG = 33 Ω Clamped inductive load, L = 100 µH T C = 25°C Maximum Ratings 1000 1000 ±20 ±30 50 25 100 ICM = 50 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C TO-247 AD (IXGH) V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight G C E TO-204 AE (IXGM) C G = Gate, E = Emitter, C = Collector, TAB = Collector Mounting torque (M3) 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °

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