IXGH25N100U1 Description
+150 V V V V A A A A W °C °C.
IXGH25N100U1 Key Features
- for minimum on-state conduction losses l MOS Gate turn-on
- drive simplicity l Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low IRM
- Part: IXGH25N100U1
- Manufacturer: IXYS
- Size: 315.17 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXGH25N100 | High speed IGBT |
| IXGH25N100A | High speed IGBT |
| IXGH25N100AU1 | High speed IGBT with Diode |
| IXGH20N120 | IGBT |
| IXGH20N120A3 | GenX3 1200V IGBTs |