IXGH25N100U1 Overview
+150 V V V V A A A A W °C °C.
IXGH25N100U1 Key Features
- for minimum on-state conduction losses l MOS Gate turn-on
- drive simplicity l Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low IRM
IXGH25N100U1 Datasheet Details
| Part number | IXGH25N100U1 |
|---|---|
| Datasheet | IXGH25N100U1_IXYSCorporation.pdf |
| File Size | 315.17 KB |
| Manufacturer | IXYS (now Littelfuse) |
| Description | High speed IGBT with Diode |
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