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Preliminary data
Low VCE(sat) High speed IGBT with Diode
VCES IXGH25N100U1 1000 V IXGH25N100AU1 1000 V
IC25 50 A 50 A
VCE(sat) 3.5 V 4.0 V
TO-247 AD (IXGH)
Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25 °C TC = 90 °C TC = 25 °C, 1 ms VGE = 15 V, T VJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH TC = 25 °C
Maximum Ratings 1000 1000 ±20 ±30 50 25 100 ICM = 50 @ 0.8 VCES 200 -55 ... +150 150 -55 ...
IXGH25N100AU1 Datasheet
